Product Summary
The AM29LV800BT-70EI is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The AM29LV800BT-70EI is also available in Known Good Die (KGD) form. For more information, refer to publication number 21536. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The AM29LV800BT-70EI requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.
Parametrics
AM29LV800BT-70EI absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground: VCC: –0.5 V to +4.0 V; A9, OE#, and RESET#: –0.5 V to +12.5 V; All other pins: –0.5 V to VCC+0.5 V.
Features
AM29LV800BT-70EI features: (1)Single power supply operation: 2.7 to 3.6 volt read and write operations for battery-powered applications; (2)Manufactured on 0.32 μm process technology: Compatible with 0.5 μm Am29LV800 device; (3)High performance: Access times as fast as 70 ns; (4)Ultra low power consumption (typical values at 5 MHz): 200 nA Automatic Sleep mode current; 200 nA standby mode current; 7 mA read current; 15 mA program/e+5rase current; (5)Flexible sector architecture: One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode); One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode); Supports full chip erase; Sector Protection features: A hardware method of locking a sector to prevent any program or erase operations within that sector Sectors can be locked in-system or via programming equipment Temporary Sector Unprotect feature allows code changes in previously locked sectors; (6)Unlock Bypass Program Command: Reduces overall programming time when issuing multiple program command sequences; (7)Top or bottom boot block configurations available.
Diagrams
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