Product Summary

The BD912 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively.

Parametrics

BD912 absolute maximum ratings: (1)VCBO Collector-Base Voltage (IE = 0): 100 V; (2)VCEO Collector-Emitter Voltage (IB = 0): 100 V; (3)VEBO Emitter-Base Voltage (IC = 0): 5 V; (4)IE,IC Collector Current: 15 A; (5)IB Base Current: 5 A; (6)Ptot Total Dissipation at Tc ≤ 25 ℃: 90 W; (7)Ts tg Storage Temperature: -65 to 150 ℃; (8)Tj Max. Operating Junction Temperature: 150 ℃.

Features

BD912 features: STMicroelectronics preferred salestypes.

Diagrams

BD912 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BD912
BD912
STMicroelectronics
Transistors Bipolar (BJT) PNP General Purpose
Data Sheet
0-1: $0.58
1-10: $0.51
10-100: $0.47
100-250: $0.42
BD9120HFN-TR
BD9120HFN-TR
ROHM Semiconductor
Switching Converters, Regulators & Controllers Variable Output
Data Sheet
0-1: $1.58
1-25: $1.31
25-100: $1.05
100-500: $0.79
BD9122GUL-E2
BD9122GUL-E2
ROHM Semiconductor
Switching Converters, Regulators & Controllers High Eff. Stepdown Sw Reg 0.3A 2.5-5.5V
Data Sheet
0-3000: $0.68