(China (Mainland))
Product Summary
The STP22NE10L Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. The applications of the STP22NE10L are high current, high speed switching, solenoid and relay drivers, motor control, audio amplifiers, DC-DC & DC-AC converters.
Parametrics
STP22NE10L absolute maximum ratings: (1)Drain-source Voltage (VGS = 0):100 V; (2)Drain- gate Vol tage (RGS =20kΩ):100 V; (3)Gate-source Voltage:± 20 V; (4)Drain Current (continuous) at Tc =25℃:22A; (5)Drain Current (continuous) at Tc = 100℃:14A; (6)Drain Current (pulsed):88 A; (7)Total Dissipation at Tc =25℃:90W; (8)Derating Factor:0.6 W/℃; (9)Single Pulse Avalanche Energy:250 mJ; (10)Storage Temperature:-65 to 175℃; (11)Max. Operating Junction Temperature:175℃.
Features
STP22NE10L features: (1)typical RDS(on) = 0.07Ω; (2)low threshold drive; (3)logic level device.
Diagrams
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